That still left questions for me. I checked out a source I used at work to determine the binding energies for tin. The source is the Center for X-Ray Optics (cxro.lbl.gov), if you are interested. Click on x-ray database and look up the binding energies for tin electrons. It’s a simple conversion to the resonance wavelength from energy.
Not what I expected to read on CarTalk first thing this morning…
The usable emission produced is 13.5nm. Most of this is now in public domain so no issue revealing details:
3nm chip lithography primarily relies on Extreme Ultraviolet (EUV) lithography, using 13.5nm light from laser-pulsed tin plasma, with Dutch firm ASML as the sole supplier of the complex machines. Foundries like TSMC (using EUV heavily, some DUV/LELE for patterning) and Samsung (GAAFETs, MBCFETs) use these cutting-edge tools, alongside advanced techniques like Stochastic Self-Aligned Double Patterning (SADP) for features beyond EUV’s direct resolution, to create these tiny circuits.
Remember inverse centimeters on spectrograms from chemistry class? That’s a proxy for energy. Multiply by Planck’s constant and the speed of light and its recast in terms of energy. The advantage is that there is a sharp change in transmission when the binding energy of electrons is exceeded.
That image is so AI it’s creepy. But understand it’s point.
What, you did not think it was my class photo? ![]()
Of course not, That time period is to new…
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Kidding sir…
